Program

Conference Programm

Monday 24th April 2023

Session 1: Reliability in micro- and nanoelectronicsChair: Ehrenfried Zschech
08:45Ehrenfried Zschech, ChairOpening remarks
T109:00Sandrine Lhostis,
STMicroelectronics, France
New reliability challenges for 3D integration
stacking using hybrid bonding
T209:30NNtbd
T310:00Ingrid de Wolf, Vladimir Chairman, IMEC, Leuven, BelgiumFinFETs: Sensing and feeling mechanical stress
10:30 – 11:00Break
Session 2: Impact of stress on device propertiesChair: Carl V. Thompson
T411:00Lionel Vignoud, CEA-LETI, Grenoble, FranceStrains and stresses control in microelectronic devices: How to optimize the steps from design to manufacturing?
T511:30Daniel Nemecek, TESCAN, Brno, Czech RepublicAdvancing nanoscale characterization of semiconductor devices by effortless 4D-STEM workflows
T612:00Christoph Gammer, University Leoben, AustriaRecent advances in nanoscale strain mapping using 4D STEM
T712:30Andre Clausner, Fraunhofer IKTS, Dresden, GermanyStudying stress effects in transistor channels by nanoindentation with varied contact geometries
13:00 – 14:00Lunch Break
Session 3: Robustness of engineered systems: From design to applicationChair: Reinhold Dauskardt
T814:30Iuliana Panchenko, Technical University Dresden, GermanyHybrid bond and nanowired bump technologies for high density interconnect formation on wafer level
T915:00Hiroshi Nishikawa, Osaka University, JapanSolid-phase bonding process using nanostructured surface for power devices in automotive
15:30Chari: tbdPoster session
17:00Andreas Aal, VOLKSWAGEN,          
Oliver Aubel, GLOBALFOUNDRIES
Podium discussion
„Reliability of automotive electronics“
19:00BBQ

Tuesday 25th April 2023

Session 4: Materials characterization for device development and reliability engineeringChair: Christoph Gammer
T1009:00NN,
Tescan, Brno, Czech Republic
tbd
T1109:30Olivier Thomas,
Aix Marseille University, France
Phase change materials for embedded memories: in situ investigation of crystalli-zation behavior using synchrotron radiation
T1210:00Ehrenfried Zschech,
deepXscan, Dresden, German
Controlled microcrack steering into toughened regions – What microelectronics can learn from nature?
10:30 – 11:00Break
Session 5: Degradation mechanisms and materials behaviourChair: Rodrigo Martins
T1311:00Matthias Stecher, Infineon Technologies, Munich, GermanyDegradation mechanisms of 10kV-reinforced isolated gate drivers at high switching frequencies greater than 30kHz
T1411:30NNtbd
T1512:00Carl V. Thompson, MIT, Boston/NY, USAContrasting Stress Evolution During Lithiation and Delithiation of Different Electrode Materials for Thin Film Batteries
T1612:30Robert Filipek, AGH Krakow, PolandTortuosity and Porosity in Electrochemical Systems –  Computed Tomography Based 3D Transport Modelling
17:00Chair: tbdPoster session
13:00 – 14:00Lunch Break
14:00Hiking tour in Saxonian Switzerland
17:00Chair: tbdPoster session
20:00Conference DInner

Wednesday 26th April 2023

Session 6: Micro- and nanomechanicsChair:  Andre Clausner
T1709:00Pal Jen Wei, Bruker, TaiwanIndentation-Induced Delamination and Adhesion Work Evaluation at Elevated Temperature in Semicon Industrial Cases
T1809:30
Kristina Kutukova, deepXscan, Dresden, Germany
In-situ nano-XCT study of the local energy release rate for crack propagation in advanced Ics
T1910:00Reinhold Dauskardt, Stanford University, Palo Alto/CA, USAHybrid Dielectric Films for Device Technologies: Understanding Relationships between Molecular Structure, Processing and Function
10:30 – 11:00Break
Session 7: Reliability of organic electronicsChair: Olivier Thomas
T2011:00Rodrigo Martins, Uninova Lisbon, PortugalEco-Strategies for next generation electronics
T2111:30NN, Heliatek, Dresden, Germanytbd
T2212:00Karl Leo, Technical University Dresden, GermanyOrganic semiconductors – from a lab curiosity to serious applications
12:30Ehrenfried ZschechClosing remarks
13:00 – 14:00Lunch Break

Poster session

PosterAuthorTitle
P1Susann RotheA Proactive Design Approach to Avoid Migration-Induced Failure in IC Interconnects 
P2André LangeInvestigating HCI and BTI degradation in 4H-SiC CMOS
P3Verena Hein The Influence of the Interconnect Material on the Performance of a Highly Robust Metallization Layout
P4Bastian RheingansThin-film transfer by nanopaste sinter-bonding
P5Stefan WeitzMicromechanical in-situ studies of on-chip interconnect stack structures using X-ray microscopy
P6Bowen ZhangIn-situ TEM study and nanomechanical characterization of fracture behavior in two-dimensional covalent organic frameworks
P7Jolanta Janczak-RuschNanomultilayers for thermal management and micro-/nano-joining  
P8Thomas Langner/       Jörg Acker Shaping the topography of solar wafers due to increased reactivity of lattice strained silicon
P9Thomas Langner/     Jörg Acker Degradation of Cathode Foils from Lithium-Ion Batteries in Humid Atmosphere
P10Thomas Langner/      Jörg Acker Deposition of copper in lithium‑ion batteries during the deep discharge process